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This article presents the design of a variable gain amplifier (VGA) with a new control circuitry, enabling a linear control of the gain while ensuring input return loss matching. While changing the gain by 47dB, the phase is less than 4°, making this VGA a suitable building block for multi-antenna frontends. The VGA together with the novel control circuitry was implemented in a 180nm CMOS process...
An overview about research activities in the field of high frequency integrated circuits and communication systems performed within the German cluster project Cool Silicon is given. Cool Silicon is located around Dresden/Silicon Saxony/Germany and features around 50 projects and 100 partners from industry and research institutions, and aims at significantly increasing the energy efficiency of information...
In this paper, we give an overview of some recent results achieved in the German cluster project Cool Silicon located around Dresden. Cool Silicon features around 50 projects and 100 partners from industry and research institutions, and aims at significantly increasing the efficiency in information and communications technology (ICT). Innovations in micro- and nanoelectronics, circuits, systems, sensors,...
The 4th generation wireless standard is ushering an era of ubiquitous connectivity. The convergence of data and voice to a portable media device is producing an explosive demand for high data rate communication. Such convergence requirements along with the need for improved battery life, smaller form factor, and reduced cost will demand new ways of system integration. The RF front-end-modules (FEM)...
This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertion loss and isolation,...
This paper describes a single pole, single throw (SPST) 180 nm CMOS thin film SOI switch developed for the most difficult cellular and 802.11x RF switch applications. We will show that power handling, linearity, insertion loss, isolation and switching times are competitive with switch applications utilizing GaAs pHEMT and silicon- on-sapphire technologies.
This paper describes a 180 nm CMOS thin film SOI technology developed for RF switch applications. For the first time we show that the well-known harmonic generation issue in HRES SOI technologies can be suppressed with one additional mask. Power handling, linearity, and Ron*Coff product are competitive with GaAs pHEMT and silicon-on-sapphire technologies.
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