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The 4th generation wireless standard is ushering an era of ubiquitous connectivity. The convergence of data and voice to a portable media device is producing an explosive demand for high data rate communication. Such convergence requirements along with the need for improved battery life, smaller form factor, and reduced cost will demand new ways of system integration. The RF front-end-modules (FEM)...
This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertion loss and isolation,...
This paper describes a single pole, single throw (SPST) 180 nm CMOS thin film SOI switch developed for the most difficult cellular and 802.11x RF switch applications. We will show that power handling, linearity, insertion loss, isolation and switching times are competitive with switch applications utilizing GaAs pHEMT and silicon- on-sapphire technologies.
This paper describes a 180 nm CMOS thin film SOI technology developed for RF switch applications. For the first time we show that the well-known harmonic generation issue in HRES SOI technologies can be suppressed with one additional mask. Power handling, linearity, and Ron*Coff product are competitive with GaAs pHEMT and silicon-on-sapphire technologies.
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