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Large-scale experimental data from 90 nm test chips consisting of 49,152 transistors, and experiments on 90 nm test chips containing inverter chains are used to establish: 1. A gate-oxide early-life failure (ELF, also called infant mortality) candidate transistor produces gradually degraded drive currents over time; 2. A digital circuit path consisting of a gate-oxide ELF candidate transistor experiences...
This paper uses 90nm transistor-level experimental data, device modeling, and circuit simulations to establish the following results: 1. A transistor with defective gate- oxide, i.e., a gate-oxide early-life failure (ELF) candidate transistor, produces gradually degraded drive currents over time before it completely loses its transistor characteristics; 2. The above phenomenon results in gradual increase...
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