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S-parameter test structures show total capacitances per perimeter of ESD diodes increased from ~0.42fF/mum in 90nm technologies to ~0.7fF/mum in 65nm and 45nm technologies. To achieve lower capacitances for high frequency circuits, layout and process optimization are needed. SCR devices from a 45nm technology show ~0.32fF/mum and can be used for circuit applications with stringent capacitance requirement...
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