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Nitrogen purge of wafer carriers is driving defect density reduction at critical process steps. We discuss several examples of defect creation related to the environment of the semiconductor wafer and how nitrogen purge of carriers improves defect density. We have applied nitrogen purge at the gate formation, SiGe epitaxy and silicide formation process steps and we report experimental split data from...
The effect of nitride composition, i.e. Si-rich (Si+) and N-rich (N+) nitride bi-layers separated by an oxynitride (SiON) layer on memory performance and reliability is studied. Bottom Si+ layer and top N+ forms the Si+/N+ bi-layer that is compared to the opposite configuration of N+/Si+ bi-layer to reveal large impact on memory performance and reliability. Si+/N+ bi-layers exhibit superior P/E windows...
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