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We demonstrate two high-performance photonic-transmitters based on uni-traveling-carrier-photodiode (UTC-PD) and separated-transport-recombination-photodiode (STR-PD). Thanks to recombination center, STR-PD exhibits comparable maximum-peak-power and electrical pulse-width with much smaller photocurrents and less serious device-heating to those of UTC-PD.
We demonstrate a GaAs/AlGaAs based uni-traveling-carrier photodiode for optical interconnect at 850 nm. Under zero-bias operation, such device exhibits reasonable external efficiency (48%), wide 3-dB bandwidth (13 GHz), and 10 Gbit/sec eye-opening without integrating with any active ICs.
By incorporating GaAs/AlGaAs based uni-traveling-carrier photodiodes with broadband micromachined monopole antennas, the demonstrated photonic-transmitter can radiate strong sub-THz pulses (20mW peak-power) with a wide bandwidth (100∼250GHz), which was measured by another photonic-receiver for ultra-wideband communication.
By incorporating GaAs/AlGaAs based uni-traveling-carrier photodiodes with broadband micromachined monopole antennas, the demonstrated photonic-transmitter can radiate strong sub-THz pulses (20mW peak-power) with a wide bandwidth (100~250GHz), which was measured by another photonic-receiver for ultra-wideband communication.
We demonstrate the high-speed and high-power performance of separated-transport-recombination photodiodes (STR-PDs) under continuous-wave operation. As compared to the control without recombination center, STR-PD has superior bandwidth performance under higher output photocurrent without sacrificing responsivity seriously.
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