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With a multi-pass cavity we avoid modelocking instabilities of low-repetition rate VECSELs due to short gain lifetime. We achieve a record-low repetition rate of 257 MHz which we could not realize with the conventional cavity.
We present the first Modelocked Integrated eXternal-Cavity Surface Emitting Laser (MIXSEL) based on a quantum well absorber, achieving 4.8-ps pulses at a repetition rate of 2.9 GHz and 6.8-ps pulses at 20.8 GHz.
We review the current state-of-the-art in ultrafast optically-pumped VECSELs and MIXSELs. They achieve >1 W average power in the femtosecond and >6 W in the picosecond regime, higher than any other semiconductor laser technologies.
We developed novel low-dispersion VECSELs modelocked with fast QD-SESAMs. The first femtosecond modelocked QD-VECSEL achieves 1 W average power with 784-fs pulses. At lower power, we achieved sub-500-fs pulses both with QW- and QD-VECSELs.
We present timing jitter measurements of an InGaAs quantum well vertical external cavity surface emitting laser (VECSEL) passively mode locked with a quantum dot semiconductor saturable absorber mirror (SESAM) at 2-GHz repetition rate. It generates 53-mW average output power in 4.6-ps pulses at 953 nm. The laser housing was optimized for high mechanical stability to reduce acoustic noise. We use a...
We present a 10-GHz Modelocked Integrated External-Cavity Surface Emitting Laser (MIXSEL) with 2.2 W average power in 21-ps pulses, which is the highest power level from any 10-GHz modelocked semiconductor laser.
We demonstrate the highest average power of any modelocked semiconductor laser: the optically-pumped MIXSEL generates 6.4-W in 28.1-ps pulses at 2.5-GHz repetition rate. Furthermore, we discuss electrically-pumped VECSELs optimized for passive modelocking and present initial cw-lasing with >100-mW.
An ultrafast electrically-pumped VECSEL design requires adjustments between electrical resistance, optical losses, dispersion and cw output power. Validating our simulations with homogeneous current injection in large devices, 120 mW cw output power are generated.
An ultrafast electrically-pumped VECSEL design requires an acceptable trade-off in cw output power. Validating our design guidelines and simulations 120 mW cw output power are generated. Homogenous current injection is even achieved for large devices.
Picosecond VECSELs achieve high average output powers of up to 2.1 W and pulse repetition rates of up to 50 GHz using semiconductor saturable absorber mirrors (SESAMs) for modelocking. The shortest pulse duration generated by a VECSEL is 260 fs, which is achieved at 15 mW average output power. We show for the first time a passively modelocked VECSEL, where the gain and the absorber are both entirely...
A detailed QD-SESAM growth study enabled the first modelocking of a VECSEL with similar spot size on gain and antiresonant SESAM. Antiresonant designs can strongly improve MIXSELs, a novel type of ultrafast integrated VECSELs.
We report the first entirely quantum-dot-based SESAM-modelocked VECSEL, using quantum-dot layers for gain and absorber. We obtain 22 mW average output power at 1053 nm wavelength in 10-ps pulses with 2.54 GHz repetition rate.
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