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Focused on the CCD composite dielectrics (Si3N4/SiO2), the method of the thermal-mechanical coupling simulation was studied by three different ANSYS models including the whole model, the 1/4 model and the 2-D model in this paper. The thermal stress and deformation were calculated, and the reasonableness of the simulation method was validated, and the differences of these three models simulation results...
Thermal stress and deformation depended on CCD Si3N4/SiO2/Si composite dielectrics thickness was simulated by ANSYS. The simulation results were indicated that the thermal stress of each dielectric film was constant and did not depend on the dielectrics thickness, and the deformation distribution was ring from vertical view, and the extremal deformation was located in the structure center whatever...
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