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We have grown ultrahigh-density self-assembled quantum dots (QDs) of InGaAs with sheet densities up to 2.5×1011 cm−2 and lateral diameters down to 10 nm, where the dot density increases with increasing As pressure during dot growth under optimum growth conditions. A ground-state photoluminescence (PL) spectrum shows a spectral width of 47 meV for the highest-density sample. Optical excitation-density...
We have studied GaAs and AlGaAs barriers for the purpose of improving spin-transport performance in spin-polarized light-emitting diodes (LEDs) based on self-assembled quantum dots (QDs) of InGaAs. In the spin-LED utilizing a spin-functional optical active layer of In-based self-assembled QDs, growth temperatures of top barriers of GaAs and AlGaAs were reduced to suppress indium diffusion from the...
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