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Room temperature Raman spectra of ternary InP1−xSbx with Sb composition x= 0.16, 0.17, 0.33, 0.36 grown on (0 0 1) InAs substrates by gas source molecular beam epitaxy (GSMBE) are reported. The crystal structure has been studied by X-ray diffraction. Phase separation was observed among the samples except the single phase one. The phonon peaks are identified for alloys grown in the miscibility gap,...
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