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On page 8203, W. D. Hu, L. Liao, W. Lu, and co‐workers develop a new way to realize the photogating effect on core/shell‐like InAs nanowire transistors for highly efficient photodetection. Under light illumination, electrons generated from the core are excited into the self‐assembled near‐surface photogating layer, forming a built‐in electric field to regulate the core conductance significantly. Anomalous...
Core/shell‐like n‐type InAs nanowire phototransistors based on majority‐carrier‐dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self‐assembled near‐surface photogating layer, forming a built‐in electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained...
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