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Single‐photon detectors (SPDs) that can sense individual photons are the most sensitive instruments for photodetection. Established SPDs such as conventional silicon or III–V compound semiconductor avalanche diodes and photomultiplier tubes have been used in a wide range of time‐correlated photon‐counting applications, including quantum information technologies, in vivo biomedical imaging, time‐of‐flight...
2D materials, of which the carrier type and concentration are easily tuned, show tremendous superiority in electronic and optoelectronic applications. However, the achievements are still quite far away from practical applications. Much more effort should be made to further improve their performance. Here, p‐type MoSe2 is successfully achieved via substitutional doping of Ta atoms, which is confirmed...
2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending the detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si photodetectors are used for short‐wavelength infrared or even long‐wavelength...
The cover shows the extrinsic photoconduction induced Ge‐based polarization‐sensitive photodetector. The structure of the Ge‐based photodetector is shown in the upper left corner. The amplified crystal structure of GeSe with several Ge vacancies is shown in the middle. Additionally, the image of excess carriers being excited by a polarized light is shown in the lower right corner. In article number...
MoS2, one of the most valued 2D materials beyond graphene, shows potential for future applications in postsilicon digital electronics and optoelectronics. However, achieving hole transport in MoS2, which is dominated by electron transport, is always a challenge. Here, MoS2 transistors gated by electrolyte gel exhibit the characteristics of hole and electron transport, a high on/off ratio over 105,...
Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2/Si substrate due to lattice mismatch. Here, a catalysis‐free approach is developed to achieve direct synthesis of long and straight InSe nanowires on SiO2/Si...
2D transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect originated from the charge‐trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity...
Recent years have witnessed rapid progresses made in the photoelectric performance of two‐dimensional materials represented by graphene, black phosphorus, and transition metal dichalcogenides. Despite significant efforts, a photodetection technique capable for longer wavelength, higher working temperature as well as fast responsivity, is still facing huge challenges due to a lack of best among bandgap,...
Room‐temperature operating means a profound reduction of volume, power consumption, and cost for infrared (IR) photodetectors, which promise a wide range of applications in both military and civilian areas, including individual soldier equipment, automatic driving, etc. Inspired by this fact, since the beginning of 1990s, great efforts have been made in the development of uncooled thermal detectors...
Van der Waals epitaxy (vdWE) is crucial for heteroepitaxy of covalence‐bonded semiconductors on 2D layered materials because it is not subject to strict substrate requirements and the epitaxial materials can be transferred onto various substrates. However, planar film growth in covalence‐bonded semiconductors remains a critical challenge of vdWE because of the extremely low surface energy of 2D materials...
High quality p–n junctions based on 2D layered materials (2DLMs) are urgent to exploit, because of their unique properties such as flexibility, high absorption, and high tunability which may be utilized in next‐generation photovoltaic devices. Based on transfer technology, large amounts of vertical heterojunctions based on 2DLMs are investigated. However, the complicated fabrication process and the...
The photodiode is a prevailing architecture for photodetection with the merits of fast response and low dark current. However, an ideal photodiode is also desired for both high responsivity and high external quantum efficiency (EQE), which may facilitate more applications. Here the photoconducting effect in a photodiode is discussed and an Au–PbS colloidal quantum dot (CQD)–indium tin oxide Schottky...
Atomic thin transition‐metal dichalcogenides (TMDs) are considered as an emerging platform to build next‐generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS2 islands to improve device performance is proposed. A four‐probe method is...
Zinc oxide (ZnO) nanosheets have demonstrated outstanding electrical and optical properties, which are well suited for ultraviolet (UV) photodetectors. However, they have a high density of intrinsically unfilled traps, and it is difficult to achieve p‐type doping, leading to the poor performance for low light level switching ratio and a high dark current that limit practical applications in UV photodetection...
Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light‐emitting devices, and photodiodes. In this work, high‐performance photovoltaic photodetectors based on MoTe2/MoS2 vertical heterojunctions are demonstrated by exfoliating‐restacking approach. The fundamental electric properties...
In article number 1703293, Tie Lin, Weida Hu, Jianlu Wang, and co‐workers present a high performance photovoltaic photodetector based on MoTe2/MoS2 Van der Waals heterojunction. The light‐induced charge transport under different biases is discussed. As self‐powered photodetectors, the vertical 2D p‐n junctions achieve a sensitive response and broad detection wavelength range. These properties indicate...
Two‐dimensional (2D) materials have drawn tremendous attention in recent years. Being atomically thin, stacked with van der Waals force and free of surface chemical dangling bonds, 2D materials exhibit several distinct physical properties. To date, 2D materials include graphene, transition metal dichalcogenides (TMDS), black phosphorus, black P(1‐x)Asx, boron nitride (BN) and so forth. Owing to their...
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