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(110)SrTiO3:Nb (NSTO)/ZnO heterojunctions were fabricated by magnetron sputtering. The NSTO/ZnO heterojunctions exhibit a typical rectification characteristic, and two attendant behaviors of bipolar resistive switching and negative differential resistance appear after applying a magnetic field. The ideality factor (n) increases from 3.0 to 8.8 and the density of interface state Nss increases from...
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