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Chemical deposition from vapors of metalorganic compounds and volatile hydrides (metalorganic vapor phase epitaxy) is the main way of growing devices’ heteroepitaxial structures based on gallium arsenide (GaAs) and solid solutions of it (AlxGa1 – xAs and InyGa1 – yAs) on an industrial scale. Electrically active impurities deposited uncontrollably on epitaxial layers during growth worsen the electrophysical...