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We have conducted a study of the compositional control of epitaxial ZnSySe1-y grown by photoassisted metal organic vapor phase epitaxy (MOVPE) (250 torr, 340°C, UV=14 mW/cm2) on GaAs (100) substrates. We have achieved lattice matched ZnSSe films on GaAs substrates using photoassisted growth using dimethylzinc (DMZn), dimethylselenide (DMSe), and tertiary-butylmercaptan (t-BuSH) as precursors. In addition,...
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