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The effects of dc hot carrier stress on the characteristics of 60GHz power amplifiers on CMOS 65nm are investigated. The increase in the threshold voltage, the decrease in the transconductance and the output conductance of the MOSFETs caused by hot carriers leads to a loss performances of the PAs. A reliability study is first made on a 1 stage PA to validate the ageing model and the degradation explanation...
A millimeter-wave power amplifier (PA) implemented in a 65 nm CMOS process with 8-metal layers and transistor fT/fMAX of 160/200 GHz is reported. The PA operates from a 1.2 V supply voltage. A power gain of 13.4 dB, an output P1dB of 12.2 dBm with 7.6 % PAE and a saturated output power of 13.8 dBm at 58 GHz are measured. S11 and S22 are lower than 10 dB, which ensures an input and output matching...
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