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Undoped and B-doped epitaxial Si1−xGex layers on Si(100) were characterized using a long-focal-length, polychromator-based, multiwavelength micro- Raman spectroscopy system. The peak position and full-width at half-maximum of the Si–Si signal from Si1−xGex correlates very strongly with Ge content and B concentration. The intensity ratio of the Si–Si peak from the epitaxial layer to the Si peak...
Piezoelectric potential of a InN nanowire (NW) growing along [0110] can be positive, negative, and zero depending on the direction of the applied transverse force. By measuring the output voltage of a InN‐NW‐based nanogenerator, about 40% to 55% of output voltages are within the range of ‐1 and ‐20 mV, and 25% to 30% of output voltages would exceed ‐100 mV. Some output voltages could reach the magnitude...
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