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Studies of phase transitions in amorphous hydrogenated silicon (a-Si:H) thick films (2–4 μm) caused by XeCl laser irradiation, with the pulse energy density above the melting threshold of a-Si:H but below the threshold of monocrystalline silicon (c-Si), are presented. A mathematical model of non-equilibrium phase changes, including crystallization in the solid state, is formulated. Time-resolved reflectivity...
We present time-resolved reflectivity, photoluminescence, dark conductivity and morphology studies of light-emitting Si prepared by pulsed XeCl laser irradiation of amorphous hydrogenated silicon (a-Si:H) deposited on a silica substrate by glow discharge deposition. Laser-induced melting and recrystallization of the a-Si:H layers lead to visible room temperature photoluminescence, accompanied by...
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