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The paper presents a method for manufacturing mechanically strong sputtering composite targets containing the phase of the Co2FeSi or Co2MnSi Heusler alloy of the stoichiometric composition, which can be used for fabrication of spin electronic devices by high-frequency magnetron deposition and pulsed laser deposition of thin films.
The electron transport properties of nanosized CoSi alloy layers deposited at a lowered temperature (350°C) from laser plasma onto single-crystalline gallium arsenide have been studied. An asymmetry of the current-voltage characteristic (CVC) in the longitudinal current transport in such layers has been found, which indicates the spin polarization of charge carriers, and a substantial (up to 18%)...
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