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Fundamental limiting factors regarding high-speed performance of broadband depletion-type silicon (Si) Mach–Zehnder modulators (MZMs) are studied. Optical and electrical measurements of MZMs with traveling wave electrodes (TWE) reveal significant dependences between optoelectrical bandwidth and design parameters. An equivalent circuit model is implemented to fit measured modulator characteristics...
Recent advances in MMIC technology have opened the possibilities for circuit operation in the THz range. There are numerous examples of BiCMOS and III-V compound device technologies with demonstrated performance beyond 600 GHz. Characterization of such MMIC are predominantly performed on-wafer in a planar environment. However, on-wafer characterization facilities do not fully keep pace with MMIC development...
This paper presents a dual-band millimeter-wave VCO utilizing RF-MEMS switches fully integrated into a standard BiCMOS process. The switch and associated transmission line form a reconfigurable inductor in the VCO core. Depending on the state of the switch, the VCO frequency can be tuned either from 48 to 52 GHz, or from 64 to 72 GHz. The VCO provides both fundamental and frequency-divided (divide...
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