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We present a wafer‐level heterointegrated indium phosphide double heterobipolar transistor on silicon germanium bipolar‐complementary metal oxide semiconductor (InP DHBT on SiGe BiCMOS) process which relies on adhesive wafer bonding. Subcircuits are co‐designed in both technologies, SiGe BiCMOS and InP DHBT, with more than 300 GHz bandwidth microstrip interconnects. The 250 nm SiGe HBTs offer cutoff...
Multi‐crystalline Ge (mc‐Ge) and Ge layers on Si substrate grown by MBE and CVD are studied. The photoluminescence (PL) spectra are analysed by comparison with those obtained for bulk Ge. We present a scheme which explains the temperature dependence of the peak positions of the direct and indirect lines observed in the PL spectra. The complex fine structure of the indirect band, consisting of different...
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