Search results for: P. H. Aaen
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This paper describes the computer-aided-design (CAD)-assited microwave characterization of coplanar waveguide (CPW) lines formed by ink-jet printed technology on flexible polyethylene terephthalate (PET) substrates. A spacemapping technique is used to link the measured results with simulations and the mapping is used to extract the electrical properties of the ink and supporting dielectric spacer...
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This paper describes the computer-aided-design (CAD)-assited microwave characterization of coplanar waveguide (CPW) lines formed by ink-jet printed technology on flexible polyethylene terephthalate (PET) substrates. A spacemapping technique is used to link the measured results with simulations and the mapping is used to extract the electrical properties of the ink and supporting dielectric spacer...
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This paper describes the design, fabrication, and testing of an on-wafer substrate that has been developed specifically for measuring extreme impedance devices using an on-wafer probe station. Such devices include carbon nano-tubes (CNTs) and structures based on graphene which possess impedances in the κ Ω range and are generally realised on the nano-scale rather than the micro-scale that is used...
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This paper describes microwave characterization of coplanar waveguide (CPW) lines formed by ink-jet printed technology on flexible polyethylene terephthalate (PET) substrates. The reel-to-reel printing process uses inkjet printing as a precursor for 2μm copper plating, which allows significantly lowered resistances as compared to traditional inks. A multiline TRL calibration technique has been used...
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In this work, a new gradient based reverse modeling approach employing Artificial Neural Networks (ANNs) for systematic RF/microwave modeling is introduced. This approach is particularly suited to modeling scenarios, where standard ANN multi-layer perceptron (MLP) fails to deliver a satisfactory model. The proposed approach detects the simplest input-output relationship inherent to the modeling problem,...
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A new type of high resolution E-field microscope system is described. The system is based on a novel design of an active E-field probe (EFP) probe, which is both nonintrusive and displays high spatial resolution. This paper focuses on the construction and spatial resolution of the probe, which shows significant evolution from that previously reported [1], and some measurements on passive structures...
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A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. The model accounts for avalanche breakdown and gate conduction, and accurately predicts DC and microwave characteristics at...
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A new quasi-two-dimensional physical model is described for microwave LDMOS power transistors. This nonlinear, process-oriented, model accounts for avalanche breakdown, hot carriers and process variations, and accurately predicts DC and microwave characteristics. The model has been applied to the optimization of LDMOS structures and shows good agreement over a wide range of structural variations....
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In this review we present a technology-independent approach to the construction of a circuit model for a high-power radio-frequency (RF) LDMOS FET. We compare and contrast this approach with other MOSFET modeling approaches used for digital and RF CMOS applications. We describe the structure of our model, the mathematical development of the constitutive relations, and the functions used for their...
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This paper demonstrates a practical approach to developing a geometrically scalable thermal resistance model to optimize layout for improved electrical performance of high-power RF transistors. The model is developed using finite element-based simulations, which show very good agreement with measured results. The proposed modeling methodology precomputes simulations over all possible layout considerations...
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A new extrinsic network and extrinsic parameter extraction methodology is developed for high power RF LDMOS transistor modeling. This new method uses accurate manifold de-embedding using electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The new extrinsic network accommodates feedback effects which are observed in high power transistors...
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A new nonlinear, charge-conservative, dynamic electro-thermal compact model for LDMOS RF power transistors is described in this paper. The transistor is characterized using pulsed I-V and S-parameter measurements, to ensure isothermal conditions. The intrinsic model current and charge sources are obtained by integration of the real and imaginary components, respectively, of the small-signal Y-parameters:...
