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MIM structures based in hafnium oxide with different annealing process were fabricated. Their resistive switching characteristics are compared to determine the role of temperature and atmosphere in the annealing process on performance of these memory devices. We probe that one of our structures can be integrated into the BEOL stage of a CI.
In this work, we present a comparison in the resistive switching characteristics of MIM structures fabricated a low temperature having different concentration of oxygen vacancies. We find that, the forming voltage and conduction window of memory devices are improved by using a stack with oxygen-deficient/rich zones inside the dielectric. Then we propose a MIM structure that can be vertically integrated...
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