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We introduce experimental results that reveal a small static and a slowly varying-dynamic magnetic field B induces a magneto-modulation of the gate leakage current of a 65nm nMOSFET. For the case of a 100mT (mili-Tesla) static B field a variation of the 6% (1.5nA/27nA) of the gate current is observed. For a 5Hz slowly varying (±100mT) square pulsed magnetic field, the gate current dynamic variation...
By measuring the current–voltage and capacitance–voltage characteristics of thin La 2 O 3 film at several different temperatures ranging from 100 to 400K and after constant-voltage stressing at different durations, we reveal the existence of a shallow electron trap with energy of about 0.19eV below the conduction band edge of La 2 O 3 . This kind of trap is involved...
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