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A highly integrated 4.9–5.9 GHz single chip front-end IC (FEIC) is presented, which is based on SiGe BiCMOS, realized in a 1.6 mm2 chip area and in an ultra-compact 1.7 × 2.0 × 0.33 mm3 package. The Tx chain has >30 dB gain and meets −40 dB DEVM up to Pout of 15 dBm and −35 dB DEVM up to Pout of 17 dBm with a 3.3 V supply, insensitive to modulation bandwidths and duty cycle. The ultra-low back-off...
The electrical and thermal performance scaling from transistor to array was studied in this paper to help improve the predictive modeling of the electrical-thermal behavior of bipolar arrays. The dc and ac performance scales well at low bias but not to the medium and high bias because thermal resistance does not scale to the total emitter area. It is demonstrated that after the correction of the R...
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