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A method of controllable doping by ion irradiation in reduced graphene oxide (RGO) is presented, and the threshold voltage of the RGO-based field-effect transistor can be finely tuned in the range from more than 30 V to about -20 V using this approach. Evidence of doping was also provided by Raman spectroscopy and Fourier transform infrared spectroscopy.
The a-C:F:H films were prepared with the mixture of CH 4 and CHF 3 gases by the microwave ECR chemical vapor deposition method. The deposition rate of the film first increases and then decreases with variable flow ratios R {[CHF 3 ]/([CHF 3 ]+[CH 4 ])}. The results from Fourier transform infrared transmission spectroscopy for these films have shown that a structural...
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