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The ultrathin InAlN/GaN heterostructure with 3 nm thickness was grown by metal organic chemical vapor deposition, and a room‐temperature mobility of 2175 cm2/V · s at sheet density of 1.39 × 1013 cm−2 was achieved. Excellent crystalline and structural quality of the ultrathin InAlN/GaN heterostructure was revealed by transmission electron microscopy and atom force microscopy. The double periodicity...
In the present work we report on the synthesis of type‐I clathrates Sr8Ga16SnxGe30 − x (0 ≤ x ≤ 12). To find out how the substitution of Sn for Ge affects structural stability and electronic structure, the structural and electronic properties for Sr8Ga16SnxGe30 − x (0 ≤ x ≤ 30) have been investigated by a first‐principles method based on the density‐functional theory (DFT). We found that the lattice...
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