The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we demonstrate a high heat resistant bonding method by Cu/Sn transient liquid phase sintering (TLPS) method can be applied to die-attachment of silicon carbide (SiC)-MOSFET in high temperature operation power module. The die-attachment is made of nano-composite Cu/Sn TLPS paste. The die shear strength was 40 MPa for 3 × 3 mm2 SiC chip after 1,000 cycles of thermal cycle testing between...
Thermal resistance evaluation of silicon carbide (SiC) power module for high-temperature operation has been performed in order to define the precise thermal resistance in real package structure. Transient thermal analysis method using SiC-Schottky barrier diode (SBD) is applied to measure the thermal structure function in wide temperature range from 50°C to 250°C. The module structure consists of...
The active-metal-brazed copper (AMC) on Si3N4 ceramic substrate was used to fabricate the all-silicon carbide (SiC) high-temperature power modules. Its reliability was evaluated under the conditions of high-temperature storage (HTS) at 250 °C and thermal cycling test (TCT) from −40 °C to 250 °C. During HTS, the AMC substrate was stable without deformation of the Cu layer. The shear strength of the...
Graphene on SiC is studied using the first-principles calculation approach. Here, the roles of the [1–100] steps for the growth mechanism are focused on, and are discussed by comparing with the role of the [11–20] step. It has been found that the surface steps play important roles for the graphene growth. These studies provide us fundamental knowledge about the application of graphene on SiC.
A high temperature resistant joint technology for bonding SiC power devices is developed using a transient liquid phase sintering (TLPS) process with a paste containing Cu and Sn powders with the size less than 15µm. The SiC devices are bonded to the Si3N4/Cu/Ni(P) substrate with the TLPS process at 260°C in a N2 atmosphere for 20 minutes. The microstructure of the bond is mainly composed of Cu6Sn...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.