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A high temperature resistant joint technology for bonding SiC power devices is developed using a transient liquid phase sintering (TLPS) process with a paste containing Cu and Sn powders with the size less than 15µm. The SiC devices are bonded to the Si3N4/Cu/Ni(P) substrate with the TLPS process at 260°C in a N2 atmosphere for 20 minutes. The microstructure of the bond is mainly composed of Cu6Sn...
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