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This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this study. This technology can potentially boost future MOSFET performance.
The highest reported sensitivity (35%) of DNA sieving by entropic trapping has been achieved with a low operation voltage of 8V, and short time of 6 minutes. Wafer scale fabrication of 3D artificial nano-channel matrices is based on proven NEMS, MEMS, and Through-Si-Via (TSV) semiconductor technologies and offers high potential for application in portable bioelectronic instruments. A mechanism based...
A 3D stackable and bidirectional Threshold Vacuum Switching (TVS) selector using the same WOx material as the RRAM element is reported. It provides the highest reported current density of >108 A/cm2 and the highest selectivity of >105. Stress test at high current density indicates >108 cycle capability for Reset/Set operation. A mechanism based on recombination of oxygen-ions and vacancies...
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