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In this paper, novel and promising high efficiency light-induced degradation (LID) free indium-doped Cz Si cells are presented. Two different commercial grade and large area B-doped Cz materials were included for comparison. Ion-implanted large area (239 and 242.22 cm2) screen printed full Al-BSF cells as well as passivated emitter rear contact (PERC) cells with oxide passivation and local aluminum...
Light-induced degradation (LID) in boron-doped Cz Si cells is known to be a function of the substrate boron and oxygen concentrations. In this paper, a combination of PC1D simulations and device theory is used to show that the efficiency loss due to LID is also a function of cell design. In particular, this loss was found to increase significantly when the surface passivation of cells is improved...
Light induced degradation (LID) in boron doped Czochralski (Cz) silicon with high oxygen content is known to degrade solar cell efficiency. Multicrystalline Si crystals also have oxygen and use B doping, but LID effects are largely unknown. In this paper, ribbon, Cz, and cast multi-crystalline Si crystals with a resistivity of 1-3 /spl Omega/cm were investigated for LID. 15-16% efficient EFG, String...
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