The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, microwave annealing is explored to tune the Schottky barrier height between NiSi and Si via boron and arsenic dopant segregation using silicide as diffusion source scheme. The microwave annealing is found to be able to obtain equivalent electron and hole Schottky barrier heights at significantly lower temperature (>100 °C) compared with conventional rapid thermal annealing. A plausible...
A novel DRAM cell based on floating gate (FG) concept is investigated. Compared to the conventional two-transistor FG DRAM cells, this new memory cell has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated diode and state ldquo1rdquo can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.