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Nanometer-scale InGaN self-assembled quantum dots (QDs) have been prepared by growth stop during the metal-organic chemical vapor deposition growth. With a 12 s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density was about 2x10 10 cm -2 . Nitride-based QD metal-semiconductor-metal (MSM)...
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