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Transmission electron microscopy is used to investigate the structural characteristics of epitaxial ZnO thin films grown on (LaAlO 3 ) 0.3 (Sr 0.5 Ta 0.5 O 3 ) 0.7 (111) (LSAT) by rf plasma-assisted molecular beam epitaxy. It is found that the growth temperature plays a key role in the formation of microstructures in ZnO film. Growth temperature dependence...
The polarity of the ZnO film grown on sapphire using an ultra-thin Ga wetting layer has been investigated by electron energy-loss spectroscopy (EELS). The intensity of the oxygen K-edge in electron energy-loss spectrum from the ZnO film shows a prominent difference when the film orientation changes from the (0002) Bragg condition to the (0002) Bragg condition. The EELS study reveals that the ZnO film...
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