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A 10 Gbit/s driver IC for lasers or lightwave modulators has been implemented using carbon-doped base AlGaAs/GaAs HBTs. The integrated circuit is intended for applications involving either direct or external modulation of laser sources. The circuit is capable of driving 60 mA into a 50 Omega load with rise/fall times of 40 ps and generates a differential output voltage of 6 V peak to peak at 10 Gbit/s...
A high-speed laser-driver IC has been fabricated using etched-gate enhancement/depletion-mode MESFET technology. It has been demonstrated that the device is capable of driving 25? load with 80 mA modulation current at up to 4 Gbit/s NRZ data rate.
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