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Vertical GaN Schottky barrier diodes (SBDs) were fabricated on free-standing GaN substrates with low dislocation density. Vertical GaN-SBDs with a forward current of 5A and a blocking voltage of 600V exhibit the most superior reverse recovery characteristics among GaN, SiC, and Si diodes. We also confirmed stable forward and reverse aging characteristics for 1000 hours at 150 °C.
531 nm InGaN-based true green LDs on semi-polar {202̄1} GaN substrates were demonstrated under pulsed operation. 520 nm cw lasing was also achieved by adopting a ridge-waveguide structure. The advantages of this particular semi-polar plane for green LDs will be discussed in the talk.
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