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In the present work low temperature GaAs epitaxial layers grown by molecular beam epitaxy on InP semi-insulating substrates and annealed at different temperatures have been extensively characterised by high resolution X-ray diffraction and X-ray topography to determine the crystal quality and the residual strain of the highly mismatched GaAs epilayer. The results of the X-ray characterization indicate...
The structural and optical properties of high purity undoped semi-insulating (SI) Cadmium Telluride (CdTe) crystals, grown by Physical Vapour Transport (PVT) and by modified Vertical Bridgman (BG) techniques have been studied. The samples were obtained from 7N source elements by direct synthesis followed by heat treatment to adjust the stoichiometry. The experimental measurements have been systematically...
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