The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this letter, we use a dual-gate (DG) structure together with nanometer dotlike doping (NDD) in active channel to produce a-IGZO thin-film transistors with very high current drive. With DG operation, the output current increases from 0.14 mA of the conventional device to 0.76 mA of the NDD device. The enhanced lateral field and improved carrier accumulation in DG operation may explain the significantly...
Applying nanometer dot‐like doping to the channel region causes the intrinsic and effective mobilities of amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistor to increase. The nanodot doping reduces the effective channel length and lowers the energy barrier to facilitate electron transport in the a‐IGZO film.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.