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We present detailed second-order nonlinear optical spectroscopic studies of the interface electronic structure in metal:GaAs thin films and interfaces. The interface spectra from Au:GaAs, Ga-rich n-type systems exhibit two resonance features in the near infrared at 0.715 eV and 0.731 eV. A single resonance feature at 0.715 eV is observed in Au:GaAs, As-rich n-type interfaces. Similar single resonance...