The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Low frequency noise behavior and hot carrier injection (HCI) effect in 65nm NMOSFET was investigated in this paper. The number of oxide traps and interface traps induced by HCI effect and traps density near silicon oxide interface before and after HCI test were calculated by low frequency noise technology. It was observed that the change during HCI test was determined by low frequency noise technology.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.