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Li-doped ZnSe films have been grown on misoriented GaAs(0 0 1) substrates by molecular-beam epitaxy to investigate the effects of step density on the electrical and the optical properties. We found that the net acceptor concentration in Li-doped ZnSe has a strong relationship with the step density on the GaAs substrates and the misorientation direction. The net acceptor concentration on the off-substrate...
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