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Radio-frequency (RF) sputtered ZnO films were investigated as a function of the Ni-ion irradiation dose at room temperature. The prepared ZnO films were irradiated with Ni-ions at an acceleration energy of 130 MeV in the dose range from 5 × 1011 ions/cm2 to 1 × 1013 ions/cm2. The electrical properties of the irradiated ZnO films changed with changing Ni-ion irradiation dose. In order to explain the...
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