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Gallium-doped ZnO epitaxial layers were grown on a-plane sapphire substrates by molecular beam epitaxy (MBE) at various Ga cell temperatures from 350 o C to 450 o C. The ZnO layers grown on a-plane sapphire were c-oriented without any trace of the 30 o rotation domains often observed in ZnO on c-plane sapphire. The Ga concentration in Ga-doped ZnO increased from 4x10 1...
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