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We report MBE growth of ZnTe layer by using a low-temperature ZnTe buffer. A thin buffer layer was inserted at 250°C (LT-buffer) and the film growth was followed at 300°C. The effect of LT-buffer to the structural quality of high-temperature-grown ZnTe layer was investigated. Two-dimensional reciprocal space mapping (RSM) results of the ZnTe layers clearly indicate that the deformation of the ZnTe...
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