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The method, which allows shape reconstruction by reading the intensity from the scanning electron microscopy image, is presented and discussed in details. The method is applied to read the morphology of etch‐pits, which were formed on the GaN surface by etching in molten KOH–NaOH eutectic mixture to delineate dislocations. The etch‐pit depth distributions are obtained and used to determine densities...
Due to the differences in etch-pit morphologies, chemical etching offers a possibility to determine densities of dislocations in respect to their type. In the present paper we propose a method, which implements a simple shape-from-shading procedure, i.e. with results derived from image brightness dependence on surface slope. It allows estimation of etch-pit depth distributions from scanning electron...
The influence of enhanced hydrostatic pressure on evolution of dislocations in self-implanted silicon during annealing at different temperatures was investigated by means of electron microscopy methods. It is found that the main cause of the pressure impact differs for various annealing temperatures. The annealing under enhanced pressure at lower temperature (1070K) has a negligible effect on structure...
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