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Conductive atomic force microscopy (C-AFM) has been employed to investigate the distribution of the lateral composition in Ge quantum dots (QDs) grown by molecular beam epitaxy on p-type Si(001) substrate. Since the different conductivity of the components (Ge and Si) in the Ge QDs results in different current signals, it is then possible to obtain the information of composition distribution from...
The dynamical behavior of tertiarybutylarsine (TBAs), which has a heavy mass of 134 and is an important precursor in the crystal growth of III–V compounds, was studied on a GaAs(001)-c(4×4) surface using a supersonic molecular beam. Direct scattering and trapping/desorption channels of incident TBAs were assigned based on a detailed analysis of incident energy and angle dependence of the scattered...
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