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In this work we report on the fabrication and characterization of GaN-on-Si HEMTs for 50V RF applications at 2 GHz. Good wafer uniformity over the main DC parameters and leakage current levels below 10 µA/mm up to 100V were obtained on 4-inch Si substrate. Moreover, thanks to low RF loss at the Si substrate, a PAE close to 50% was measured on 1 mm devices by means of CW load-pull measurements at 50V/2GHz...
We describe the fabrication and characteristics of high voltage enhancement mode SiN/AlGaN/GaN/AlGaN double heterostructure FET devices. The Si3N4 not only acts as a passivation layer but is crucial in the device concept as it acts as an electron donating layer (1). By selective removal under the gate of the in-situ SiN, we realize e-mode operation with a very narrow threshold voltage distribution...
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