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Short-wave infrared (SWIR) HgCdTe focal-plane arrays (FPAs) with a cutoff wavelength of 2.5 µm have been produced using both planar ion-implanted and heterojunction-mesa device structures. The two-dimesnional FPAs are comprised of a 320×256 format with 30-µm pixel pitch and are cooled by a multistage thermo-electric (TE) cooler. Measured R0A values of the two types of device structures show similar...
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