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It is demonstrated by use of the secondary ion mass spectroscopy (SIMS) some impurities, including Si, Mg and Ca, can be doped into GaN films with depths of ten nanometer and quite high surface densities in plasma without any external bias at room-temperature (RT). The physical mechanism of plasma doping without any external bias (PDWOEB) is RT diffusion stimulated by the plasma, which is very different...
It is demonstrated by use of secondary ion mass spectroscopy that some impurities, including Fe, Au, Al, Ga, Sn and In, can be doped into Si wafers with depths of tens nanometer but quite high densities in radio frequency (RF)-excited plasma without any bias power at room temperature. This process is referred to as plasma doping without bias (PDWOB). In PDWOB, the quantity and depth of an impurity...
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