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We have investigated total ionizing dose (TID) radiation effects in AlO-gated ultra-thin body InGa As MOSFETs. A non-monotonic dependence of the threshold voltage on the X-ray radiation dose was observed and analyzed; the accompanying degradation in subthreshold swing (SS) likely is caused by non-uniform trapped charge in the near-interfacial AlO rather than...
We report the effect of V/III ratio and nanowire diameter on the crystal structure and optical properties of InP nanowires. Time -resolved photoluminescence studies have revealed that wurtzite nanowires show longer carrier lifetimes than zinc-blende ones.
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to...
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the...
Semiconductor nanowire (NW) heterostructures are increasingly important building blocks for electronic and optoelectronic devices. III-V nanowires with attention to well-controlled growth parameters, high structural quality and high optical quality NWs with unusually long recombination lifetimes can be achieved. We probe these NWs experimentally with both CW and time-resolved photoluminescence spectroscopy...
InP-based monolithically integrated p-i-n/HBT photoreceiver 8- and 16-element arrays with a novel on-chip shielding, to reduce electrical and optical crosstalk, have been fabricated and characterized. The maximum measured bandwidth per channel is 11.5 GHz. A measured adjacent channel crosstalk of -25 dB improves to -40 dB with the shielding at a frequency of 5 GHz and with a dual biasing scheme.
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